Impact of snapback-induced hole injection on gate oxide reliability of N-MOSFETs

Abstract

N-channel MOSFETs associated with CMOS output driver circuits are often driven deep into snapback during electrostatic discharge (ESD) events. The charge-pumping technique is used to show significant hole trapping in the oxide resulting from snapback bias conditions. Floating-gate measurements verify that significant hole current flows through the oxide during snapback. It is noted that snapback-induced hole injection can dramatically reduce gate oxide charge to breakdown and explains reduced hot-carrier lifetimes after snapback stress. Snapback stress results in oxide damage that is in many ways similar to that found during hot-carrier stress and radiation damage. These long-term reliability concerns limit the maximum allowable snapback current. >