Abstract
In this study, we developed a super Nernstian pH sensitivity of InSnxOy (ITO) sensing film deposited on PET flexible through a simple sol-gel method for an extended-gate field-effect transistor (EGFET) pH sensor. We employed X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy to characterize the structural, morphological and chemical features, respectively, of the films prepared under three Sn concentrations (10, 15 and 20 mol%). The ITO-based EGFET device processed at the 15 mol% Sn concentration exhibited the highest sensitivity of 62.04 mV/pH, the lowest hysteresis voltage 2.60 mV and the smallest drift 1.08 mV/h among these concentrations. We attribute this behavior to the optimal Sn content in the ITO film to induce a large number of free electron, causing a lower sheet resistivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
