Impact of Sm2O3 doping on PZT-PMI-PZS ternary ceramics: Phase structure, microstructure, and dielectric characteristics

Abstract

This study aims to comprehensively evaluate the impact of Sm2O3 doping on PZT ceramics, specifically focusing on the phase structure, microstructure, and dielectric characteristics of Pb1-xSmx[(Zr0.52Ti0.48)0.9(Mo1/3In2/3)0.05(Zn1/3Sb2/3)0.05]O3 samples namely PSZT-PSMI-PSZS ceramics. Sm2O3 was doped at site A within the range of 0.00 ≤ x ≤ 0.08 using the solid-state reaction method and sintering at 1150 °C. The examination of the results revealed that the samples exhibited a perovskite structure, along with a secondary phase, with increasing intensity of the said phase as Sm content increased. XRD, Rietveld refinement, and Raman spectroscopy analysis indicate a decrease in the rhombohedral phase ratio (R) and an increase in the tetrahedral phase ratio (T) with higher Sm content. Microscopic examination using SEM demonstrates variations in microstructure, with the highest density and grain size observed at a small increment of Sm content (x ≤ 0.02). Optimal electrical properties were achieved at x = 0.00, including a high dielectric constant (εr = 8578), Curie temperature (Tc) of 303 °C, and dielectric loss (tanδ) value of 0.34. Conductivity studies indicate a negative temperature coefficient of resistance (NTCR) for all samples. Additionally, the relationship between electrical characteristics and Sm2O3 doping is discussed. This research provides valuable insights into the structural, microstructural, and electrical properties of PZT ceramics affected by Sm2O3 doping.