Abstract
We investigate surface passivation effects of SiNx films deposited by inductive coupled plasma chemical vapor deposition (ICPCVD) and plasma enhanced chemical vapor deposition (PECVD) technologies for InAlAs/InGaAs/InP photo-detectors. It is found that ICPCVD deposited SiNx film effectively reduces the densities of the interface states and slow traps near SiNx/InAlAs interface, which realize the small surface recombination velocity and low surface current for InAlAs/InGaAs/InP photo-detectors. By comparing C-V and XPS results, it is suggested that the trap density reduction by ICPCVD technology could be attributed to the disorder suppression on InAlAs surface due to the high density of SiNx film and less processing energy to the InAlAs surface.
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