Abstract
For the first time, the impact of single halo (SH) implantation on the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions has been investigated using quantum simulation. The simulations are based on the self-consistent solution of the two-dimensional Poisson–Schrödinger equation, within the non-equilibrium Green's function (NEGF) formalism. The results show SH-CNTFET decreases significantly leakage current and drain conductance and increases on–off current ratio and voltage gain as compared to conventional CNTFET. It is seen that short-channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential.
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