Abstract
AbstractFor the Ti/Al contact to n‐type GaN, the impact of Si+ implantation on the reduction of contact resistance is investigated. The undoped GaN, grown on the sapphire substrate, is implanted by Si ions with the energy of 150 keV at the dose ranging from 5 x 1013 to 5 x 1014/cm2 and subsequently annealed at 1200 °C for 1 min in N2 gas flow. For the Ti(50 nm)/Al(200 nm) contacts annealed at 550 and 600 °C, as Si ion dose is increased, the specific contact resistance is decreased with the Schottky barrier height of 0.27 eV. The Ti/Al contact annealed at 600 °C reveals the exteremly low contact resistance as low as 1.2 x 10–7 Ωcm2 for the Si ion dose of 5 x 1014/cm2. Ti/Al contact annealed above 700 °C shows Rc in the order of 10–6 Ωcm2 even though Si ion dose increases. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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