Abstract

Numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along <110> in terms of the device performance of strained 65nm-node nMOSFETs with Contact Etch Stop Layer (CESL), and that both the shear strain component and the quantum confinement effect play an important role in this superiority.KeywordsShear StrainMobility ModelInversion LayerQuantum Confinement EffectGate BiasThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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