Abstract
The magnetic and transport properties of Co/Pt multilayer-based bottom-pinned perpendicular magnetic tunnel junctions (pMTJs) on Ru, Hf, and Ru/Hf seed layers (SLs) were investigated after annealing at different temperatures. The perpendicular synthetic antiferromagnetic (pSAF) layer on the Ru SL was found to be thermally robust (after annealing at 400 °C for 30 min). A high tunnel magnetoresistance (TMR) ratio of 100% was achieved at a low resistance-area product (5.5 Ω·µm2) and was stable up to 350 °C. For the stack on Ru SL, TMR degradation after annealing was caused by the degradation of the pMTJ (CoFeB/MgO/CoFeB), while in the Hf and Ru/Hf SL, both the pMTJ and pSAF were affected.
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