Abstract
PI has been widely used as the alignment layer for LCD. In this paper, the PI film with rubbering treatment is investigated for the resistive layer of Al/PI/TaN ReRAM. For basic electrical characteristics, PI-based ReRAM has outstanding characteristics. Based on the Rubbing Technique, the angle between rubbing spindle and stepper (α angle) was modulated for four degrees, including 45, 60, 75, 90 degrees. According to result, PI-based ReRAM reach a larger memory window (Ion/Ioff ratio>109 ) with smaller α angle. Furthermore, the leakage current is significantly decreased without ON current degradation. The reliability of PI-based ReRAM was improved by rubbing technology with different α angles.
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