Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

Hao Qiu,Tomohiro Yamashita,Masaharu Kobayashi,Tomoko Mizutani,Toshiro Hiramoto,Yoshiki Yamamoto,Hidekazu Oda,Nobuyuki Sugii,Shiro Kamohara,Hideki Makiyama,Takuya Saraya

doi:10.1109/vlsit.2015.7223694

Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

Hao Qiu, Tomohiro Yamashita + Show 9 more

https://doi.org/10.1109/vlsit.2015.7223694

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Publication Date: Jun 1, 2015

Citations: 12

Affiliation: The University of Tokyo, Photonics Electronics Technology Research Association

#Random Telegraph Noise #Impact Of Random Telegraph Noise + Show 8 more

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Abstract

The effect of random telegraph noise (RTN) on write stability of SRAM cells in sub-0.4V operation is intensively measured and statistically analyzed. RTN of N-curves in Silicon-on-Thin-BOX (SOTB) cells is monitored. By developing statistical models, it is found that, different from bulk SRAM cells operating at high supply voltage (V DD ), fail bit rate (FBR) at sub-0.4V is degraded by RTN. The origin of high FBR due to RTN at sub-0.4V is discussed.

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