Abstract
In this paper, we evaluate the influence of Quantum Confinement and Coulomb Blockade on the retention characteristics of charge trapping memory with incorporating Si nanocrystals into the charge trapping layer using the self-consistent simulator we developed. The effects of Quantum Confinement and Coulomb Blockade under different charge trap densities, temperatures, nanocrystal sizes and tunneling oxide thicknesses are analyzed comprehensively. The results can be used to study the performance and mechanisms of nanocrystals based charge trapping memory.
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