Abstract
Star sensors play a crucial role as high-precision optical attitude navigation devices in satellite attitude control systems. The CMOS image sensor is an important component of the imaging system of the star sensor and experiences performance degradation due to the total ionizing dose effect and displacement damage effect in the radiation environment of its long-term operational workspace. As a result, the detection capability and attitude positioning accuracy of the star sensor gradually deteriorate. The performance of CMOS image sensors can be partially restored after annealing but the impact on the performance of star sensors is unclear. This study conducted 100 MeV proton irradiation experiments with different fluences on CMOS image sensors and performed room temperature and high temperature annealing treatments. By testing and analyzing the performance of star sensors equipped with irradiated and different annealing treatments on CMOS image sensors, the impact mechanism of CMOS image sensor radiation damage and annealing recovery on the performance variation of star sensors was obtained. This study provides theoretical support for reliability of long-term in-orbit star sensors.
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