Abstract
The effects of proton irradiation on the static ( dc) and dynamic (switching) performance of high-voltage 4H-SiC Junction Barrier Schottky (JBS) diodes are investigated for the first time. In contrast to that observed on a high-voltage Si p - i - n diode control device, these SiC JBS devices show an increase (degradation) in series resistance (R/sub S/), a decrease (improvement) of reverse leakage current, and increase (improvement) in blocking voltage after high-fluence proton exposure. Measured breakdown voltages of post-irradiated SiC diodes increase on average by about 200 V after irradiation. Dynamic reverse recovery transient measurements show good agreement between the various dc observations regarding differences between high-power SiC and Si diodes, and show that SiC JBS diodes are very effective in minimizing switching losses for high-power applications, even under high levels of radiation exposure.
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