Abstract
In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current ${I}_{ \mathrm{\scriptscriptstyle ON}}$ due to LER presents a weak correlation with that of OFF-state current ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ . Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of ${I}_{ \mathrm{\scriptscriptstyle ON}}$ , WFV contributed up to 84.7% and 82.8% of the total fluctuations for n- and p-type, respectively.
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