Abstract
The effect of pre-existing lattice defects on radiation defect dynamics in solids remains unexplored. Here, we use a pulsed beam method to measure the time constant of defect relaxation for 500 keV Ar ion bombardment of Si at 100 °C with the following two representative types of pre- existing lattice disorder: (i) point defect clusters and (ii) so-called “clamshell” defects consisting of a high density of dislocations. Results show that point defect clusters slow down defect relaxation processes, while regions with dislocations exhibit faster defect interaction dynamics. These experimental observations demonstrate that the dynamic aspects of damage buildup, attributed to defect trapping-detrapping processes, can be controlled by defect engineering.
Highlights
The target is in a semi-insulating state, and point defects are expected to be in a neutral state[23]
Samples with clamshell defects were created according to a procedure described by Goldberg et al.[14] by first irradiating at −196 °C with a continuous 500 keV Ar ion beam to a dose of 1.7 × 1013 cm−2
Radiation defect dynamics in samples with and without such pre-existing defects was measured at 100 °C by the pulsed beam method when the total Ar ion dose was split into a train of equal square pulses with a pulse duration of 1 ms
Summary
As discussed elsewhere[23], in these pulsed-beam experiments, the concentration of radiation-generated stable lattice defects largely exceeds the initial dopant concentration. All irradiations described here, including experiments with continuous beams, were performed in a broad beam mode (rather than with rastered beams)[17] with an instantaneous dose rate (Fon) of ~1.9 × 1013 cm−2 s−1.
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