Abstract
The effect of the two-step process on the properties of graphene oxide (GO) is studied. At the first stage, CH4 (or CH2+N2) plasma treatment was performed. The second one was heat treated at a temperature of 650° C. The formation of thin polycrystalline carbon films on the surface of graphene oxide was detected. The ratio of carbon to oxygen concentration corresponds to graphene oxide. Smooth surfaces of the films were detected by an atomic force microscope. Films have lower sheet resistance and higher carrier mobility than reduced GO (rGO) during the same heat treatment. An analysis of the Raman spectra shows that the formed films have larger graphene domains than the rGO. The presence of nitrogen in methane plasma leads to a decrease in the resistance and mobility of carriers in the carbon film.
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