Impact of phase transformation on MoS2 thin films on high temperature and its concomitant role in In-MoS2/P-Si structured PN junction diodes

Abstract

In this paper, we focus on thin films (TFs) growth MoS2 material coated with different concentrations of Indium (In) (2, 4, and 6 wt %) by adopting the JNSP technique with the optimized temperature at 550 °C. The XRD pattern of prepared samples revealed the polycrystalline nature with improved grain size along with In concentrations. The chemical structures of the typical RAMAN spectra of MoS2, and In/MoS2 were confirmed by Raman spectra. FE-SEM photographs of the higher concentrated TFs displayed the rod-shaped structural grains are reduced and replaced by a disintegrated cluster ceramic plate-like structure, and the EDAX spectrum confirmed the elements. The minimum energy band gap of the In–MoS2 films was found to be 2.25 eV with the In 6 wt %. The conductivity increased for the higher concentration of In–MoS2 TFs with elevated corresponding activation energy and resistivity values. The fabricated In–MoS2/p-Si types PN have good electrical behavior for all the diodes specifically, 6 wt% of In added sample yielded a better result.