Impact of p-Type NiO Pocket and Ultra-Thin Graphene Layer on the RF Performance of β-Ga2O3 MOSFET

Abstract

In this work, the RF performance of proposed p-type NiO pocket based β-Ga2O3/graphene heterostructure MOSFET has been investigated. The figure of merits (FOMs) for its performance investigation includes transconductance (gm), output conductance (gd), intrinsic capacitances (gate to drain capacitance Cgd and gate to source capacitance Cgs) and cut-off frequency (fT). The large signal CW RF performance is also investigated which includes output power (POUT), power-added efficiency (PAE) and power gain (Gp) as a key FOMs. The key idea behind this work is to demonstrate a device with improved RF performance and low leakages. The RF characteristics of the proposed device have been studied to show its utility in the wireless applications. The introduction of ultra-thin graphene layer beneath the channel region results in 0.85 times lower Cgs, 1.04 times improvement in fT and 1.5 dB superior GP in comparison to the p-type NiO pocket based β-Ga2O3 (NiO-GO) MOSFET. The proposed structure shows superior RF performance with low leakages.