Abstract
In this paper we show resistive switching characteristics of ZnFe2O4 thin films grown by pulsed laser deposition at various oxygen partial pressures. We discuss how the microstructure, surface roughness, oxidation condition, and resistive switching properties of ZnFe2O4 thin films are influenced by the oxygen partial pressure prevalent in the chamber during the deposition process. The films were deposited at oxygen partial pressure (pO2) of 0.0013, 0.013, 0.13 and 1.3 mbar. The ZnFe2O4 thin film deposited at the lowest pO2 (0.0013 mbar) did not display a resistive switching characteristic. The ZnFe2O4 device deposited at 0.13 mbar yielded the best results. These devices have a low SET variance and a large memory window (more than 2 orders of magnitude) due to an optimum amount of oxygen vacancies/ions contained in the ZnFe2O4 film, which is helpful for better resistive switching, than devices deposited at other oxygen pressures. We also find that the migration of oxygen vacancies is linked to the resistive switching process.
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