Impact of Oxygen on the Generation of Slip Lines and the Electronic Properties of Si-based Substrates

Abstract

We focus on slip line formation and propagation on different types of Si and SOI substrates that underwent high temperature anneals during 65nm RFSOI device fabrication. Different parameters are found to contribute to slip line formation and dislocations propagation, mainly the substrate properties (thickness, layer and oxygen in silicon handle), the temperature gradients and the support between furnace carriers and backsides of substrates. Several parameters contribute to substrate deformation, e.g. the warpage increase. The warp degradation is found to be directly linked to low oxygen concentrations in silicon handle. This understanding is very helpful to introduce and process new substrates in advanced front-end process flows for MOS device fabrication.