Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors* *Project supported by the General Program of the National Natural Science Foundation of China (Grant No. 61974159) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences and Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20200039).

Abstract

The effects of dry O2 post oxidation annealing (POA) at different temperatures on SiC/SiO2 stacks are comparatively studied in this paper. The results show interface trap density (D it) of SiC/SiO2 stacks, leakage current density (J g), and time-dependent dielectric breakdown (TDDB) characteristics of the oxide, are affected by POA temperature and are closely correlated. Specifically, D it, J g, and inverse median lifetime of TDDB have the same trend against POA temperature, which is instructive for SiC/SiO2 interface quality improvement. Moreover, area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.