Abstract
A combined study on structural, vibrational, optical and carrier conductivity behaviours has been carried out on ZnO films implanted with 45 keV N5+ ions with a fluence of 1 × 1015−1 × 1017 cm−2. The paper provides an interesting result that the sample implanted with the highest fluence of 1 × 1017 cm−2 shows p-type conductivity at room temperature with a reasonably high carrier concentration of . All implanted samples show negative magnetoresistance and its value increases with the increase in the magnetic field as well as fluence. The maximum negative MR value at 5 K, obtained by the application of 8 T magnetic field, has been found to be −11.8% for the film with the highest fluence of 1 × 1017 cm−2.
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