Abstract
In this paper, a gradual advancement in the development of high performance TCAD Simulation of Tunnel Field Effect Transistor (TFET) for better switching application is introduced by increasing Ion current. This is achieved by implanting a metal strip in each oxide layer near the gate and source junction in a Double Gate Tunnel FET. Furthermore, the use of HfO 2 instead of SiO 2 as the oxide layer has been examined. The combination of metal strips in the oxide layer of HfO 2 offers a higher $\mathrm{I}_{\mathrm{O}\mathrm{N}}/\mathrm{I}_{\mathrm{OFF}}$ ratio, steep subthreshold slope (SS) and significant change in the performance of transconductance $(\mathrm{g}_{\mathrm{m}})$ , transconductance efficiency (TGF) and gate-to-drain capacitance $(\mathrm{C}_{\mathrm{g}\mathrm{d}})$ . Hence, at low gate voltages the proposed device could be a better substitute for ultra-low power applications. All simulated results presented here are carried out with the aid of 2-D Silvaco ATLAS Software.
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