Abstract
ABSTRACTThis paper reports the impact of the Mn incorporation on the structural and magnetic properties of Ga1−xMnxN on the metal-organic vapor phase deposition (MOCVD). Crystalline quality and phase purity were determined by high-resolution X-ray diffraction and indicated that no macroscopic second phases are formed during growth. Atomic force microscopy revealed a 2-dimensional MOCVD step-flow growth pattern in the Mn-incorporated samples. Various annealing steps were applied to some of the samples to reduce compensating defects and to investigate the effects of post processing on the growth. SQUID measurements showed an apparent ferromagnetic hysteresis behavior. However, none of the requirements for room temperature ferromagnetism in the prevailing mean field DMS theories were found. Therefore, different origins of the ferromagnetic signal are discussed.
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