Abstract

In this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability. Indeed, common problems with ReRAM are related to high variability in operating conditions and low yield. At a cell level ReRAMs suffer from variability. At an array level, ReRAMs suffer from different voltage drops seen across the cells due to line resistances. Although research has taken steps to resolve these issues, variability combined with resistive paths remain an important characteristic for ReRAMs. In this context, a deeper understanding of the impact of these characteristics on ReRAM performances is needed to propose variability tolerant designs to ensure the robustness of the technology. The presented study addresses the memory cell, the memory word up to the memory matrix.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.