Abstract
To study how light-emitting diode material properties impact its photoelectric characteristics at low temperature, the electrical performance of light-emitting diode chips was tested. Results of electrical performance testing of the die showed that the light-emitting diode forward voltage increases with decreasing temperature; this phenomenon is mainly caused by the material properties of the chip. Moreover, atomic force microscopy and scanning electron microscopy were used to examine crystal structure, surface morphology and layer arrangement, so as to further explore the relationship between photoelectric properties and chip material properties at low temperatures. It may be concluded that although the material properties of the chip can improve optical performance of light-emitting diodes at low temperature, they can also deteriorate the electrical performance and reduce the reliability and lifetime of the light-emitting diode chip.
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