Abstract
In this report, BFO thin film samples were deposited using Pulsed Laser Deposition (PLD) technique by altering the PLD laser energy from 150 to 250 mJ, to study the role of laser energy on resistance switching property of pure BFO thin film. Efficient resistive switching properties are essentially required for realization of a memristor device. An appreciably high resistance ratio (∼100) between HRS i.e. high resistance state (“OFF” state) and LRS i.e. low resistance state (“ON” state) was obtained for the sample fabricated at 200 mJ PLD laser energy with a stable retention period of 106 s with reproducible endurance cycles of 108. From the study of charge transport mechanism, it has been observed that the Ohmic conduction is the dominating mechanism in the lower applied biased region while space charge limited conduction (SCLC) and Child's law are the dominating mechanisms in the higher applied biased region for all the deposited BFO thin film samples. Current study extends the application of multiferroic BFO thin films for memory devices.
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