Year-end Sale % OFF 
Abstract
Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the SiO2∕Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
