Abstract
It is demonstrated that the quality of nanoscale triangular structures on Si (100) surfaces can be improved by applying intermittent ion beam sputtering. This investigation is conducted along the work of Rakhi et al. (2023), which introduces an additional physical parameter space related to intermittent sputtering. Through this approach, we have observed the minimum surface defect density associated with higher-order surface structures, particularly at tT = 8 min. This can have large potential applications in modern cutting-edge technology demands of controlled growth of nanostructures, especially the low dimensional high aspect ratio nanostructures.
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