Abstract
It is demonstrated that the quality of nanoscale triangular structures on Si (100) surfaces can be improved by applying intermittent ion beam sputtering. This investigation is conducted along the work of Rakhi et al. (2023), which introduces an additional physical parameter space related to intermittent sputtering. Through this approach, we have observed the minimum surface defect density associated with higher-order surface structures, particularly at tT = 8 min. This can have large potential applications in modern cutting-edge technology demands of controlled growth of nanostructures, especially the low dimensional high aspect ratio nanostructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
