Abstract
Polarity asymmetries in J– V and C– V characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr (1− x )Al x O 2 films and TiN electrodes are evaluated. Physical analysis of the interface between the TiN bottom electrode and the ZrO 2 layer reveals that the TiN bottom electrode undergoes enhanced oxidation during crystallization of ZrO 2. Simultaneously, nitrogen is incorporated into ZrO 2 near the TiN interface, and an intermixing of ZrO 2 and TiO 2 was identified by AR-XPS and SIMS. This asymmetry results in significant band offset differences for top and bottom electrodes of the crystalline MIM capacitor. Conduction mechanisms are correlated to amorphous vs. crystalline film properties. In addition, asymmetrical charge trapping and a higher trap density is found for crystalline Zr (1− x )Al x O 2 compared to amorphous films, leading to a polarity dependence in the leakage currents.
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