Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Abstract

Core–Shell Solar Cells In article number 2100339 by Alexander Gudovskikh and co-workers, the influence of interface states on the performance of a-Si:H/c-Si solar cells based on Si wires fabricated using a combination of latex sphere lithography and cryogenic dry etching is studied using simulation and experimental measurements. The key role of the Si wire geometry and doping density for sensitivity of quantum efficiency to interface states on the sidewall is demonstrated.