Impact of InGaAs Thickness and Indium Content on the Performance of (InP/InGaAs/InAlAs) MOSFET Structure

Abstract

In this work, we have to study the impact of InGaAs thickness and Indium content on the performance of (InP/InGaAs/InAlAs) MOSFET structure. For this purpose, we have to solve the self-consistent of Poisson and Schrodinger equations that give the carriers and their eigen state energies at each level using TCAD tools. The charge transport model is based on the conventional drift-diffusion equation with Fermi-Dirac statistics, Shockley-Read-Hall (SRH) recombination and electrical field-dependent mobility. The charge control under the gate and I-V characteristics of InP/InxGa1-xAs/InyAl1-yAs MOSFET will be presented. The obtained results show the effect of the InGaAs channel layer thickness and its indium content on the gate’s capacity to control the charge carriers below it. It is found that the optimal values for improving our MOSFET structure are a 9 nm thick InGaAs channel, and content values of x = 0.80 and y = 0.52. We have extracted the output and transfer characteristic with the gate length of 150 nm, we have found an On-state drain current value of 1090 mA/mm and maximum transconductance of 563 mS/mm. It is also found that the drain current reach to 860 mA/mm at a gate voltage of 1 V and drain voltage of 0.7 V.