Abstract
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a $\mathrm{Si}$ lattice within approximately $1$ nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63\ifmmode\pm\else\textpm\fi{}10\mathrm{%}$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.
Highlights
Atomic precision (AP) placement of individual dopant atoms in Si nanoelectronic devices is a promising avenue for realizing a variety of technologies ranging from analog quantum simulators [1,2,3,4,5,6], to qubits [7,8,9,10,11,12,13], to digital electronics [14,15]
We demonstrate that even for perfectly patterned lithographic windows, single-donor incorporation is stochastic with a 63 ± 10% likelihood of success at roomtemperature dosing conditions, which we corroborate with a kinetic model
Our model suggests that near-deterministic incorporation may be possible above room temperature or at low-pressure, long-time dosing conditions
Summary
Atomic precision (AP) placement of individual dopant atoms in Si nanoelectronic devices is a promising avenue for realizing a variety of technologies ranging from analog quantum simulators [1,2,3,4,5,6], to qubits [7,8,9,10,11,12,13], to digital electronics [14,15]. STM lithography allows for the fabrication of devices in which single-donor atoms are positioned to within approximately 1 nm of a target lattice site [19] This weak placement disorder has previously been predicted not to be of concern when it comes to the prospects for fabricating analog quantum simulators [5] or nuclear spin qubits [20] with this approach.
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