Abstract
The impact of electrostatic charging damage on the characteristics and gate oxide integrity of polysilicon thin film transistors (TFTs) during plasma hydrogenation were investigated. Hydrogen atoms passivate trap states in the polysilicon channel; however, plasma processing induced electrostatic charging effects damage the gate oxide and the oxide/channel interface. The passivation effect of hydrogen atoms is antagonized by the generation of interface states. TFTs with different areas of antennas were used to study the damage caused by electrostatic fields. Oxide charging damage during plasma hydrogenation also seriously degrades the integrity of the gate oxide and the channel/oxide interface.
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