Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors

Abstract

The impact of hot carrier stress on low-frequency noise features characteristic of floating-body silicon-on-insulator (SOI) metal oxide semiconductor field-effect transistors (MOSFETs) including fully and partially depleted MOSFETs is investigated. It is reported for the first time that Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is strongly affected by hot carrier stress. The excess noise is well suppressed in fully depleted MOSFETs after stress. However, it is not so significantly suppressed in partially depleted MOSFETs, but the characteristic frequency in the excess noise spectrum shifts after stress. The mechanism of these phenomena is also discussed. Hot carrier stress causes interface-trap generation, and leads to a decrease in the floating-body effect due to recombination of excess holes and electrons through the interface traps, thus leading to instability in the Lorentzian-like excess low-frequency noise.