Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution

Abstract

Threshold voltage (Vth) variation for ferroelectric field-effect transistor (FeFET) memory using Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) films with Al nanoclusters is investigated. We show that Si-monolayer formed over Al nanoclusters effectively reduces the variation, due to suppressing the migration and aggregation of Al nanoclusters, resulting that the orientation and the growth rate for each ferroelectric domain is successfully aligned. The effect is more evident for the erase state at which the potential fluctuation of the substrate side is superposed on the Vth variation.