Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

Abstract

This paper demonstrates Al2O3 as gate dielectric with embedded Ag-NCs to synchronize the individual advantages offered by metal-NCs and high-k dielectric materials. Simultaneous achievement of enhanced programming speed and longer data retention has been a challenge in designing floating gate based memory devices. Replacement of SiO2 by other materials with higher dielectric constants as gate dielectric has been proposed for enhancing programming speed without affecting the retention time.