Abstract
The near-surface and bulk behaviour of lattice defects introduced during high temperature processing steps is examined for respectively dry and wet oxidations, oxidations in a chlorine containing atmosphere and inert annealings. The depth and radial distribution of the defects is investigated with optical microscopy and high voltage electron microscopy. The influence of the interstitial oxygen concentration and of the application of a low temperature preannealing is studied in detail. The defect kinetics is discussed in terms of an interstitial growth model.
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