Abstract
The dopant profiles in shallow p–n-junctions in silicon crystals irradiated with high-energy Kr and Xe ions (HEII) have been studied. It was found that HEII can cause the dopant redistribution during followed annealing. The most pronounced effect was seen for Sb and Bi impurities. In this case the decrease of dopant concentration due to out-diffusion towards the surface was observed in HEII treated samples. The shift of initial dopant distribution towards the surface is followed by the increase in a dopant lack. The increase in electronic stopping power leads to an increase of this effect also. The observed effect is associated with accelerated diffusion in vicinity of extended defects introduced by HEII along ion tracks.
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