Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Abstract

Impact of high-conductivity n-type anti-debiasing layer (ADL) on the photoresponse of focal plane array (FPA) elements in mercury-cadmium-tellurium based photovoltaic n-on-p infrared FPA detectors is analyzed via consideration of, first, measured current-voltage characteristics of FPA elements with “leaking” and “non-leaking” array photodiodes and, second, spatial photoresponse profiles measured using FPA elements of both types. A most pronounced manifestation of the parasitic diode with the p-n junction at the absorber layer/ADL interface consists in the emergence of negative photoresponses produced by the “leaking” FPA elements.