Abstract
The paper is devoted to inquiries in resistivity of ohmic contacts with heavily-doped semiconductor (2´1018 cm–3) made of p-type GaAs, in the case of many-layer structure of the contact — Au/TiBx/Ti. As shown by measurements, this ohmic system is competitive enough and has some advantages over other ohmic structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
