Abstract
The influences of 90 keV H+、O+ and 1 MeV electron irradiation on the morphology, structure, defect and optoelectronic properties of unintentionally doped (UID), resistive β-Ga2O3 bulk crystals are investigated. Results found that H+ irradiation slightly reduced the blue luminescence (BL), due to the deactivation of VGa acceptors by forming VGa-xH complex. Electron irradiation remarkably boosted the BL peak while O+ irradiation shows an opposite effect. It is noteworthy that the defect with g= 1.998 electron spin resonance (ESR) signal was observed in O+ irradiated β-Ga2O3 for the first time, also as evidenced from the change of the appearance from transparent to grayish. Interestingly, contrary to the decrease of the g= 1.96 spin in H+- and electron- irradiated samples, the g= 1.96 shallow donor resonance experienced surprising enhancement after O+ irradiation, due to the creation of abundant VGa which facilitated the formation of SiGa defects and/or the SiGa-Oi complex.
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