Abstract
The grain size effect of the resistivity in the metal nanocrystalline systems is known to stem mainly from grain boundaries. In this letter, we propose a semi-quantum model based on transfer-matrix approach to calculate the resistivity. In accord with the above results, the impact of grain size distribution on the resistivity of 2D and 3D metal nanocrystalline is surveyed. The findings show the change of the resistivity is associated with the number of grain boundaries per mean free path.
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