Abstract
Herein, a theoretical investigation is conducted on grain‐size inhomogeneity's impact and grain boundaries’ (GBs’) electrical nature in thin‐film solar cells. Using the Matthiessen rule, grain‐size‐dependent mobility is derived in polycrystalline material. The obtained grain‐size‐dependent mobility values are fed into the Poisson solver to calculate device performance. The severity of grain sizes in the lower region determines how grain size affects the photovoltaic performance by grain‐size‐dependent efficiency simulation. Low grain sizes become critical, especially for low‐thickness absorbers. The second aspect of the study assesses potential variation at GBs to reveal the impact of the electrical properties of GBs. Evidence shows that the acceptor defects at GB are benign for device performance, causing upward band bending at the GB and acting as electron barriers. Device performance is adversely affected by donor defects at GBs due to downward band bending. As summarized in the findings, the polycrystallinity‐induced cause–effect relationships of grains are likely to interest solar cell researchers.
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