Abstract
, , and high- dielectric stacks are grown on germanium substrates by atomic layer deposition at temperatures of 150 and . The electrical properties of the films are compared in terms of substrate preparation and deposition temperature. We demonstrate that a deposition on germanium-oxide-free substrates by using HBr-etching pretreatment yields a much higher breakdown voltage of the high- oxide compared to HF- or HCl-type pretreatments. Further, we show that the deposition of dielectrics at lower temperatures leads to decreased leakage currents in the range of about 1 order of magnitude and to lower inversion capacitances at high measurement frequencies.
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