Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect

Abstract

In this study, we analyzed the impact of gate overlap on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors (SB MOSFETs) including the gate induced barrier lowering (GIBL) effect by two-dimensional (2D) full-band self-consistent ensemble Monte Carlo (EMC) simulation. Results show that the GIBL effect and gate overlap affect drive current significantly. The GIBL effect relieves the degradation of current drivability caused by overlap. However, the influence of scattering on the performance of SB MOSFETs is almost negligible since the electrons across the channel are nearly ballistic.