Abstract
The Fowler-Nordheim (FN) stress on PMOSFET cause I dsat decrease and V th increase. In this work, we have investigated FN stress induced device degradation mechanisms in PMOSFETs with different gate length and oxide thickness. We describe a quantitative relationship between I dsat , I dlin and V th change under FN stress condition.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.