Abstract
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) characteristics under 60Co gamma radiation of two different commercial power GaN HEMT structures. Different bias conditions were applied to both structures during irradiation and some static measurements, such as threshold voltage and leakage currents, were performed. Additionally, dynamic resistance was measured to obtain practical information about device trapping under radiation during switching mode, and how trapping in the device is affected by gamma radiation. The experimental results showed a high dependence on the HEMT structure and the bias condition applied during irradiation. Specifically, a free current collapse structure showed great stability until 3.7 Mrad(Si), unlike the other structure tested, which showed high degradation of the parameters measured. The changes were demonstrated to be due to trapping effects generated or enhanced by gamma radiation. These new results obtained about RON_dyn will help elucidate trap behaviors in switching transistors.
Highlights
Gallium nitride (GaN) is a promising material for next-generation power devices due to its wide band gap, which allows a large breakdown electric field and the possibility of operating under harsh environmental conditions [1,2,3]
Different behaviors were observed for GaN high-electron-mobility transistors (HEMTs) subjected to gamma radiation which were structure-dependent
While HD-GIT HEMT characteristics were mainly unchanged during irradiation, the GaN MISHEMT structure underwent some changes
Summary
Gallium nitride (GaN) is a promising material for next-generation power devices due to its wide band gap, which allows a large breakdown electric field and the possibility of operating under harsh environmental conditions [1,2,3] Such characteristics make these devices promising for space applications, where temperature and radiation are key factors. The inherent radiation hardness, the capability to withstand higher breakdown voltages, and the higher operating temperatures will enable this technology’s use in future space applications, such as telecommunications, Earth observation, and science missions [4,5] These promising advantages have pushed the research focus on the reliability of GaN devices under radiation conditions. Energetic particles which impact semiconductor devices lose their energy to ionizing and nonionizing processes while they travel through the devices
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