Impact of forming gas annealing on the dielectric properties of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

Abstract

SrBi2Ta2O9 (SBT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by metalorganic decomposition method. The dielectric properties of SBT films strongly depend on annealing conditions and annealing time. Compared with films not annealed in forming gas, the relative dielectric constant and the dissipation factor for SBT films annealed at 400 °C decrease by 23.4% and 30.6%, respectively. It implies that the dominant dielectric loss mechanism is related to the degradation of films. Forming gas ambient may have played an important role in the increase of oxygen vacancies in SBT thin films and the degradation of dielectric properties.