Abstract
In many commercial and noncommercial photoresists the real and the imaginary parts of the refractive index are changed during exposure. Using a finite-difference beam-propagation algorithm, we analyze the impact of these nonlinear optical effects on the photolithographic process. Changes of the real part of the refractive index have a considerable impact on dose latitudes, sidewalls, swing curves, iso-dense bias and other process parameters. These effects become more dominant as the thickness of the resist layer increases.
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